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TF921 Datasheet(PDF) 3 Page - Dynex Semiconductor

Part # TF921
Description  Fast Switching Thyristor
PDF  5 Pages
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Manufacturer  DYNEX [Dynex Semiconductor]
Direct Link  http://www.dynexsemi.com
Logo DYNEX - Dynex Semiconductor

TF921 Datasheet(HTML) 3 Page - Dynex Semiconductor

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TF921..H
3/5
DYNAMIC CHARACTERISTICS
V
TM
Parameter
Symbol
Conditions
Maximum on-state voltage
At 1500A peak, T
case = 25
oC
I
RRM/IDRM
Peak reverse and off-state current
At V
RRM/VDRM, Tcase = 125
oC
Gate source 20V, 20
Ω
t
r ≤ 0.5µs, Tj = 125˚C
dV/dt
Maximum linear rate of rise of off-state voltage
Linear to 60% V
DRM Tj = 125
oC, Gate open circuit
Min.
Max.
Units
-
1.85
V
-
100
mA
-
500
V/
µs
Repetitive 50Hz
-
500
A/
µs
Non-repetitive
-
800
A/
µs
Rate of rise of on-state current
dI/dt
V
T(TO)
Threshold voltage
At T
vj = 125
oC
r
T
On-state slope resistance
At T
vj = 125
oC
1.1
-V
-
0.375
m
Ω
Delay time
t
gd
1.5*
-
µs
Total turn-on time
t
(ON)TOT
3*
-
µs
T
j = 25˚C, IT = 50A,
V
D = 300V, IG = 1A,
dI/dt = 50A/
µs, dI
G/dt = 1A/µs
*Typical value.
I
H
Holding current
T
j = 25
oC, I
TM = 1A, VD = 12V
100*
-
mA
T
j = 125˚C, IT = 1380A, VR = 100V,
dV/dt = 20V/
µs to 0.6V
DRM,
dI
R/dt = 50A/µs, tp = 1ms.
Turn-off time
t
q
120
-
µs
t
q
code: H
GATE TRIGGER CHARACTERISTICS AND RATINGS
I
L
Latching current
T
j = 25
oC, I
G = 0.5A, VD = 12V
300*
-
mA
Reverse recovery charge
Q
RR
2200
-
µC
Symbol
Parameter
Conditions
Gate non-trigger voltage
V
Units
Max.
3.0
0.25
Typ.
mA
V
V
GD
Gate trigger voltage
250
V
GT
I
GT
Gate trigger current
At V
DRM Tcase = 125
oC, R
L = 1kΩ
V
DRM = 12V,
T
case = 25
oC, R
L = 6Ω
V
DRM = 12V, Tcase = 25
oC, R
L = 6Ω
-
-
-
V
30
0.25
V
V
RGM
Peak reverse gate voltage
V
5.0
-
A
-
-
-
10
I
FGM
Peak forward gate current
Peak forward gate voltage
V
FGM
V
FGN
Peak forward gate voltage
Anode positive with respect to cathode
Anode negative with respect to cathode
Anode positive with respect to cathode
P
GM
P
G(AV)
Peak gate power
Mean gate power
-
-
50
3.0
W
W



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