SST6601 datasheet(3/7 Pages) SECOS

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Elektronische Bauelemente

SST6601

3.4A, 30V, RDS(ON) 55mΩ

Ω

-2.3A, -30V, RDS(ON) 115mΩ

Ω

N And P-Channel Enhancement Mode Power MOSFET

25-Mar-2014 Rev. A

Page 3 of 7

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Source-Drain Diode

N-Ch

IS=1A, VGS=0

Forward On Voltage

P-Ch

VSD

-1

IS= -1A, VGS=0

N-Ch

IS=3.4A, VGS=0 ,dI/dt=100A/µs

Reverse Recovery Time

P-Ch

TRR

IS= -2.3A, VGS=0 ,dI/dt=100A/µs

N-Ch

5.5

IS=3.4A, VGS=0 ,dI/dt=100A/µs

Reverse Recovery Charge

P-Ch

Qrr

7.6

IS= -2.3A, VGS=0 ,dI/dt=100A/µs

N-Ch

1.5

Continuous Source Current

(Body Diode)

P-Ch

-1.5

Notes:

Pulse width limited by Max. junction temperature.

Pulse width≦300µs, duty cycle≦2%.

Surface mounted on 1 in

2 copper pad of FR4 board; t≦5 sec. 180°C/W when mounted on min. copper pad.

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