SMS2310 datasheet(2/3 Pages) SECOS

2 / 3 page

Elektronische Bauelemente

SMS2310

3A, 60V, RDS(ON) 105mΩ

Ω

N-Channel Enhancement MOSFET

13-Dec-2013 Rev. A

Page 2 of 3

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Teat Conditions

STATIC CHARACTERISTICS

Drain-Source Breakdown Voltage

V(BR)DSS

VGS = 0, ID = 250µA

Gate-Body Leakage Current

IGSS

±100

VGS=±20V, VDS =0

Zero Gate Voltage Drain Current

IDSS

µA

VGS=0, VDS =60V

Gate Threshold Voltage

VGS(th)

0.5

VDS = VGS, ID = 250µA

105

VGS=10V, ID =3A

Static Drain-Source On Resistance

RDS(ON)

125

VGS=4.5V, ID =3A

Forward Transconductance

gFS

1.4

VDS=15V,ID =2A

Body diode forward voltage

VSD

1.2

VGS=0, IS =3A

Dynamic Characteristics

Input Capacitance

Ciss

247

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

19.5

VDS=30V,

VGS=0,

f=1MHz

Switching Characteristics

Turn-On Delay Time

td(ON)

Rise time

Turn-Off Delay Time

td(OFF)

Fall time

VDD=30V,

VGS=10V,

ID=1.5A,

RGEN=1 ,

Total Gate Charge

Gate-Source Charge

Qgs

Gate-Drain Charge

Qgd

1.3

ID= 3A

VDS= 30V

VGS= 4.5V

Notes:

Repetitive rating : Pulse width limited by junction temperature.

Surface mounted on FR4 board , t≤10s.

Pulse Test : Pulse Width≤300µs, Duty Cycle≤0.5%.

Guaranteed by design, not subject to producting.

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