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SSG9926N Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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SSG9926N Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 4 page  Elektronische Bauelemente SSG9926N 6.9 A, 20 V, RDS(ON) 30 mΩ Ω Ω Ω N-Ch Enhancement Mode Power MOSFET 11-Jul-2013 Rev. A Page 1 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. A H B M D C J K F L E N G RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Low RDS(on) trench technology. Low thermal impedance. Fast switching speed. APPLICATIONS White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits PACKAGE INFORMATION Package MPQ Leader Size SOP-8 2.5K 13’ inch MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Ratings Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±12 V TA = 25°C 6.9 A Continuous Drain Current 1 TA = 70°C ID 5.4 A Pulsed Drain Current 2 IDM 30 A Continuous Source Current (Diode Conduction) 1 IS 2.8 A TA = 25°C 2.1 W Total Power Dissipation 1 T A = 70°C PD 1.3 W Operating Junction & Storage Temperature Range TJ, TSTG -55 ~ 150 °C Thermal Resistance Ratings t≦10 sec 62.5 °C / W Thermal Resistance Junction-ambient (Max.) 1 Steady State RθJA 110 °C / W Notes 1. Surface Mounted on 1” x 1” FR4 Board. 2. Pulse width limited by maximum junction temperature. SOP-8 Millimeter Millimeter REF. Min. Max. REF. Min. Max. A 5.80 6.20 H 0.35 0.49 B 4.80 5.00 J 0.375 REF. C 3.80 4.00 K 45° D 0° 8° L 1.35 1.75 E 0.40 0.90 M 0.10 0.25 F 0.19 0.25 N 0.25 REF. G 1.27 TYP. G S S S D D D D |
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