SSG9926N datasheet(2/4 Pages) SECOS

2 / 4 page

Elektronische Bauelemente

SSG9926N

6.9 A, 20 V, RDS(ON) 30 mΩ

Ω

N-Ch Enhancement Mode Power MOSFET

11-Jul-2013 Rev. A

Page 2 of 4

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Teat Conditions

Static

Gate Threshold Voltage

VGS(th)

VDS= VGS, ID=250µA

Gate-Body Leakage Current

IGSS

±100

VDS= 0V, VGS= ±12V

VDS=16V, VGS=0V

Zero Gate Voltage Drain Current

IDSS

µA

VDS=16V, VGS=0V, TJ=55°C

On-State Drain Current

ID(on)

VDS=5V, VGS=4.5V

VGS=4.5V, ID=4.8A

Drain-Source On-Resistance

RDS(ON)

VGS=2.5V, ID=3.9A

Forward Transconductance

gfs

VDS=10V, ID=4.8A

Diode Forward Voltage

VSD

0.74

IS=1.4A, VGS=0V

Dynamic

Total Gate Charge

Gate-Source Charge

Qgs

1.2

Gate-Drain Charge

Qgd

2.6

ID=4.8A

VDS=10V

VGS=4.5V

Turn-On Delay Time

Td(on)

Rise Time

Turn-Off Delay Time

Td(off)

Fall Time

VDS=10V

ID=4.8A

VGEN=4.5V

RL=2.1

RGEN=6

Input Capacitance

CISS

439

Output Capacitance

COSS

Reverse Transfer Capacitance

CRSS

VDS=15V

VGS=0V

f=1Mhz

Notes

Pulse test：PW ≦ 300µs duty cycle ≦ 2%.

Guaranteed by design, not subject to production testing.

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