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SSP7438N Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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SSP7438N Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 2 page  Elektronische Bauelemente SSP7438N 22 A, 30 V, RDS(ON) 7.5 m N-Channel Enhancement MOSFET 18-Sep-2013 Rev. B Page 1 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. FEATURES Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe SOP-8PP saves board space. Fast switching speed. High performance trench technology. APPLICATION DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones PACKAGE INFORMATION Package MPQ Leader Size SOP-8PP 3K 13’ inch ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Rating Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS 20 V TA=25°C 22 Continuous Drain Current 1 TA=70°C ID 18 A Pulsed Drain Current 2 IDM 50 A Continuous Source Current (Diode Conduction) 1 IS 2.3 A TA=25°C 5 Power Dissipation 1 TA=70°C PD 2.2 W Operating Junction and Storage Temperature Range TJ, TSTG -55 ~ 150 °C Thermal Resistance Rating t≦10 sec 25 Maximum Junction to Ambient 1 Steady State RθJA 65 °C / W Notes 1. Surface Mounted on 1” x 1” FR4 Board. 2. Pulse width limited by maximum junction temperature. Millimeter Millimeter REF. Min. Max. REF. Min. Max. A 0.85 1.00 θ 0 ° 10 ° B 5.3 BSC. b 5.2 BCS C 0.15 0.25 c 0.30 0.50 D 3.8 BCS. d 1.27BSC E 6.05 BCS. e 5.55 BCS. F 0.03 0.30 f 0.10 0.40 G 4.35 BCS. g 1.2 BCS. L 0.40 0.70 SOP-8PP |
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