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SSP7438N Datasheet(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH

Part # SSP7438N
Description  N-Channel Enhancement MOSFET
PDF  2 Pages
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Manufacturer  SECOS [SeCoS Halbleitertechnologie GmbH]
Direct Link  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

SSP7438N Datasheet(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH

  SSP7438N Datasheet HTML 1Page - SeCoS Halbleitertechnologie GmbH SSP7438N Datasheet HTML 2Page - SeCoS Halbleitertechnologie GmbH  
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Elektronische Bauelemente
SSP7438N
22 A, 30 V, RDS(ON) 7.5 m
N-Channel Enhancement MOSFET
18-Sep-2013 Rev. B
Page 2 of 2
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Teat Conditions
Static
Gate-Threshold Voltage
VGS(th)
1
-
-
V
VDS = VGS, ID = 250μA
Gate-Body Leakage
IGSS
-
-
±
100
nA
VDS =0, VGS=20V
-
-
1
VDS =24V, VGS=0
Zero Gate Voltage Drain Current
IDSS
-
-
5
μA
VDS =24V, VGS=0,TJ=55°C
On-State Drain Current
1
ID(ON)
40
-
-
A
VDS =5V, VGS= 10V
-
-
7.5
VGS=10V, ID =2A
Drain-Source On-Resistance
1
RDS(ON)
-
-
11.5
mΩ
VGS=4.5V, ID =2A
Forward Transconductance
1
gFS
-
40
-
S
VDS=15V,,ID =2A
Diode Forward Voltage
VSD
-
0.7
-
V
IS=2A, VGS=0
Dynamic
2
Total Gate Charge
Qg
-
16
-
Gate-Source Charge
Qgs
-
5
-
Gate-Drain Charge
Qgd
-
6
-
nC
ID=10A
VDS=15V
VGS=4.5V
Turn-On Delay Time
Td(ON)
-
5
-
Rise Time
Tr
-
4
-
Turn-Off Delay Time
Td(OFF)
-
23
-
Fall Time
Tf
-
9
-
nS
ID=1A,
VDD=15V
VGEN=10V
RL=6Ω
Notes
1.
Pulse test：PW ≦ 300 us duty cycle ≦ 2%.
2.
Guaranteed by design, not subject to production testing.



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