SMG5403 datasheet(2/4 Pages) SECOS

2 / 4 page

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

SMG5403

-2.6A , -30V , RDS(ON) 115 mΩ

Ω

P-Channel Enhancement Mode MOSFET

Elektronische Bauelemente

17-Sep-2012 Rev. A

Page 2 of 4

ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Teat Conditions

Static

Drain-Source Breakdown Voltage

BVDSS

-30

VGS=0, ID= -250µA

Gate-Threshold Voltage

VGS(th)

-0.5

-1.4

VDS=VGS, ID= -250µA

Forward Transconductance

gFS

VDS= -5V,,ID = -2.5A

Gate-Body Leakage Current

IGSS

±100

VGS=±12V

Drain-Source Leakage Current

TJ=25°C

IDSS

-1

µA

VDS= -30V, VGS=0

TJ=70°C

-25

VDS= -24V, VGS=0

Drain-Source On-Resistance

RDS(ON)

115

VGS= -10V, ID= -2.6A

150

VGS= -4.5V, ID= -2A

200

VGS= -2.5V, ID= -1A

Total Gate Charge

4.5

VDS= -15V,

VGS= -4.5V,

ID= -2.5A

Gate-Source Charge

Qgs

0.8

Gate-Drain Charge

Qgd

1.34

Turn-on Delay Time

Td(on)

5.4

VDS= -15V,

VGS= -10V,

RG=3.3 ,

RD=4.6 ,

ID= -1A

Rise Time

4.6

Turn-off Delay Time

Td(off)

Fall Time

Input Capacitance

Ciss

415

VGS=0

VDS= -25V,

f=1.0MHz

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

Source-Drain Diode

Diode Forward Voltage

VSD

-1.2

IS= -1.2A, VGS=0

Reverse Recovery Time

Trr

16.2

IS= -2.5A, VGS=0

dl/dt=100A/µS

Reverse Recovery Charge

Qrr

Notes:

Pulse width limited by Max. junction temperature.

Pulse width≦300µs, duty cycle≦2%.

Surface mounted on 1 in

2 copper pad of FR4 board; 270°C / W when mounted on Min. copper pad.

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