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SSG4934N Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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SSG4934N Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 2 page  SSG4934N 8.9 A, 30 V, RDS(ON) 58 mΩ Ω Ω Ω Dual N-Channel Mode Power MOSFET Elektronische Bauelemente 09-May-2012 Rev. A Page 1 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. A H B M D C J K F L E N G RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. FEATURES Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe SOP-8 saves board space. Fast switching speed. High performance trench technology. PACKAGE INFORMATION Package MPQ Leader Size SOP-8 2.5K 13 inch MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Ratings Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V Continuous Drain Current 1 TA = 25°C ID 8.9 A TA = 70°C 7.3 A Pulsed Drain Current 2 IDM 30 A Continuous Source Current (Diode Conduction) 1 IS 2.6 A Total Power Dissipation 1 TA = 25°C PD 2.1 W TA = 70°C 1.3 Operating Junction & Storage Temperature Range TJ, TSTG -55 ~ 150 °C Thermal Resistance Ratings Thermal Resistance Junction-Ambient (Max.) 1 t ≦ 10 sec RθJA 62.5 °C / W Steady State 110 °C / W Notes: 1. Surface Mounted on 1” x 1” FR4 Board. 2. Pulse width limited by maximum junction temperature. SOP-8 REF. Millimeter REF. Millimeter Min. Max. Min. Max. A 5.80 6.20 H 0.35 0.49 B 4.80 5.00 J 0.375 REF. C 3.80 4.00 K 45° D 0° 8° L 1.35 1.75 E 0.40 0.90 M 0.10 0.25 F 0.19 0.25 N 0.25 REF. G 1.27 TYP. D D S S G G D D |
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