SSG4934N datasheet(2/2 Pages) SECOS

2 / 2 page

SSG4934N

8.9 A, 30 V, RDS(ON) 58 mΩ

Ω

Dual N-Channel Mode Power MOSFET

Elektronische Bauelemente

09-May-2012 Rev. A

Page 2 of 2

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Teat Conditions

Static

Gate Threshold Voltage

VGS(th)

VDS=VGS, ID=250µA

Gate-Body Leakage Current

IGSS

±100

VDS=0, VGS= ±20V

Zero Gate Voltage Drain Current

IDSS

µA

VDS=24V, VGS=0

VDS=24V, VGS=0, TJ= 55°C

On-State Drain Current

ID(on)

VDS=5V, VGS=10V

Drain-Source On-Resistance

RDS(ON)

VGS=10V, ID=5A

VGS=4.5V, ID=4.4A

Forward Transconductance

gfs

VDS=15V, ID=5A

Diode Forward Voltage

VSD

0.77

IS=1.3A, VGS=0

Dynamic

Total Gate Charge

3.8

ID= 5A

VDS= 15V

VGS= 4.5V

Gate-Source Charge

Qgs

1.3

Gate-Drain Charge

Qgd

Input Capacitance

Ciss

327

VDS=15V

VGS=0

f=1MHz

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

Turn-On Delay Time

Td(on)

1.9

VDD=15V

ID=5A

VGEN=10V

RL=3

RGEN=6

Rise Time

Turn-Off Delay Time

Td(off)

Fall Time

Notes:

Pulse test：PW ≦ 300µs duty cycle ≦ 2%.

Guaranteed by design, not subject to production testing.

SSG4934N Datasheet(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH

SSG4934N Datasheet(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH

Html Pages

1 2

Datasheet Download

Link URL