EL2004EL2004C

350 MHz FET Buffer

g

5V DC Electrical Characteristics

Parameter

Description

Test Conditions

EL2004

EL2004C

Units

Min

Typ

Max

Test

Min

Typ

Max

Test

Level

Level

Output Offset

10

30

I

10

30

I

mV

Voltage

35

I

35

III

mV

Voltage Gain

090

095

10

I

090

095

10

II

VV

080

088

095

I

080

088

095

II

VV

Input Impedance

I

X

Output

4

8

I

4

10

II

X

Impedance

Output Voltage

g

20

g

29

I

g

20

g

29

III

V

Swing

Input Current

250

I

500

I

pA

25

IV

5

IV

nA

10

I

20

III

nA

PSRR

Power Supply

60

V

60

V

dB

Rejection Ratio

Supply Current

175

20

I

175

20

II

mA

Note 1 When operating at elevated temperatures the power dissipation of the EL2004 must be limited to the values shown in the

typical performance curve ‘‘Maximum Power Dissipation vs Temperature’’ Junction to case thermal resistance is 31 CW

when dissipation is spread among the transistors in a normal AC steady-state condition In special conditions where heat is

concentrated in one output device junction temperature should be calculated using a thermal resistance of 70 CW

Note 2 Specification is at 25 C junction temperature due to requirements of high-speed automatic testing Actual values at operating

Note 3 Measured in still air seven minutes after application of power See graph of Input Current During Warm-up for further

information

frequency

g

15V AC Electrical Characteristics

Parameter

Description

Test Conditions

EL2004

EL2004C

Units

Min

Typ

Max

Test

Min

Typ

Max

Test

Level

Level

BW

Bandwidth

(Note 4)

200

350

I

200

350

I

MHz

140

200

I

140

200

I

MHz

Settling Time to 1%

6

V

6

V

ns

Input Capacitance

3

V

3

V

pF

3