2SD2583 datasheet(1/8 Pages) NEC

Part #	2SD2583

Description	AUDIO FREQUENCY AMPLIFIER, SWITCHING NOPN SILICON EPITAXIAL TRANSISTORS

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Manufacturer	NEC [NEC]

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CHARACTERISTICS

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Collector Cutoff Currnet

ICB0

VCB = 30 V, IE = 0

100

nA

Emitter Cutoff Current

IEB0

VEB = 6.0 V, IC = 0

100

nA

DC Current Gain

hFE1

VCE = 2.0 V, IC = 1.0 A

150

600

−

DC Current Gain

hFE2

VCE = 2.0 V, IC = 4.0 A

50

−

Collector Saturation Voltage

VCE(sat)1

IC = 1.0 A, IB = 50 mA

0.07

0.15

V

Collector Saturation Voltage

VCE(sat)2

IC = 2.0 A, IB = 0.1 A

0.13

0.25

V

Collector Saturation Voltage

VCE(sat)3

IC = 4.0 A, IB = 0.2 A

0.24

0.50

V

Base Saturation Voltage

VBE(sat)

IC = 2.0 A, IB = 0.1 A

0.86

1.50

V

Gain Bandwidth Product

fT

VCE = 10 V, IE = 50 mA

120

MHz

Output Capacitance

Cob

VCB = 10 V, IE = 0, f = 1 MHz

77

pF

©

1996

DATA SHEET

The information in this document is subject to change without notice.

SILICON TRANSISTOR

2SD2583

FEATURES

• Low VCE(sat)

VCE(sat) = 0.15 V Max (@lC/lB = 1.0 A/50 mA)

• High DC Current Gain

hEF = 150 to 600 (@VCE = 2.0 V, lC = 1.0 A)

ABSOLUTE MAXIMUM RATINGS

Maximum Voltage and Current (TA = 25

°C)

Collector to Base Voltage

VCB0

30 V

Collector to Emitter Volteage

VCE0

30 V

Emitter to Base Voltage

VEB0

6.0 V

Collector Current (DC)

IC(DC)

5.0 A

Collector Current (Pulse)*

IC(Pulse)

10 A

Base Current (DC)

IB(DC)

2.0A

* PW

≤ 10ms, Duty Cycle ≤ 10 %

Maximum Power Dissipation

Total Power Dissipation (TC = 25

°C)

PT

10 W

Total Power Dissipation (TA = 25

°C)

PT

1.0 W

Maximum Temperature

Junction Temperature

Tj

150

°C

Storage Temperature

Tstg

−55 to 150 °C

ELECTRICAL CHARACTERISTICS (TA = 25

°C)

Document No. D10628EJ1V0DS00 (1st edition)

Date Published June 1996 P

Printed in Japan

AUDIO FREQUENCY AMPLIFIER, SWITCHING

NOPN SILICON EPITAXIAL TRANSISTORS

PACKAGE DIMENSIONS

in millimeters (inches)

8.5 MAX.

(0.334 MAX.)

1.2

(0.047)

1.2

(0.047)

0.8

(0.031)

2.3

(0.090)

1.

2.

3.

Emitter

Collector connected to mounting plane

Base

2.3

(0.090)

+0.08

−0.05

0.55

(0.021)

+0.08

−0.05

12 3

φ

2.8 MAX.

(0.110 MAX.)

3.2 ± 0.2 ( 0.126)

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