V2

MASW-006102-13610

HMIC™ Silicon PIN Diode Switch

with Integrated Bias Network

• North America Tel: 800.366.2266 / Fax: 978.366.2266

• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300

• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298

Visit www.macom.com for additional data sheets and product information.

MA-COM Technical Solutions and its affiliates reserve the right to make changes to the

product(s) or information contained herein without notice.

1

ADVANCED:

Data Sheets contain information regarding a product MA-COM Technical Solutions is

considering for development. Performance is based on target specifications, simulated results, and/

or prototype measurements. Commitment to develop is not guaranteed.

PRELIMINARY:

Data Sheets contain information regarding a product MA-COM Technical Solutions

has under development. Performance is based on engineering tests. Specifications are typical.

Mechanical outline has been fixed. Engineering samples and/or test data may be available.

Commitment to produce in volume is not guaranteed.

Parameter

Absolute Maximum

Operating Temperature

Storage Temperature

Junction Temperature

Applied Reverse Voltage

50V

RF Incident Power

+33dBm C.W.

1

Bias Current +25°C

±20mA

Note:

1. Maximum

operating

conditions

for

a

combination of RF power, D.C. bias and

operating temperature:

+33dBm CW @ 15mA (per diode) @+85°C

Features

♦ Broad Bandwidth 2 to 18 GHz

♦ Usable up to 26 GHz

♦ Integrated Bias Network

♦ Low Insertion Loss / High Isolation

♦ Rugged, Glass Encapsulated Construction

♦ Fully Monolithic

♦ RoHS Compliant

Description

The MASW-006102-13610 is a SP6T broadband

switch with integrated bias network utilizing M/A-COM

Integrated Circuit) process, US Patent 5,268,310. This

wafer fabrication process allows the incorporation of

silicon pedestals that form series and shunt diodes

and vias by imbedding them in low loss, low

dispersion glass. By using small spacing between

elements, plus the combination of silicon and glass

gives this HMIC device low loss and high isolation

performance with exceptional repeatability through low

millimeter frequencies. Large bond pads facilitate the

use of low inductance ribbons or 1 mil wire while full

backside gold metallization allows for die attachment

using 80/20 - Au/Sn, 62/36/2 - Sn/Pb/Ag solders or

electrically conductive silver epoxy.

Yellow areas denote wire bond pads

Applications

The MASW-006102-13160 is a high performance

switch which is suitable for use in multi-band ECM,

radar, and instrumentation control circuits where high

isolation to insertion loss ratios are required. With a

standard +5V/-5V, TTL controlled PIN diode driver,

80nS switching speeds can be achieved.