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MADP042008 Datasheet(PDF) 2 Page - M/A-COM Technology Solutions, Inc. |
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MADP042008 Datasheet(HTML) 2 Page - M/A-COM Technology Solutions, Inc. |
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2 / 4 page  2 SURMOUNTTM 8µM PIN Diodes RoHS Compliant Rev. V1 MADP-042XX8-13060 Series ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. • North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400 • India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Specifications Subject to Change Without Notice. Electrical Specifications @ TAMB = + 25 °C Parameter Symbol Conditions MADP-042308-13060 MADP-042508-13060 Units Typ Max Typ Max Capacitance CT 1,3 - 10V, 1 MHz 1 pF 0.10 0.20 0.18 0.30 Capacitance CT 1,3 - 10 V, 1 GHz 1,3 pF 0.10 0.19 Capacitance CT 1,3 - 40 V, 1 MHz 1 pF 0.09 0.20 0.18 0.30 Capacitance CT 1,3 - 40 V, 1 GHz 1,3 pF 0.10 0.18 Resistance RS 2,3 + 20 mA, 1 GHz 2,3 W 1.38 0.97 Resistance RS 2,3 + 50 mA, 1 GHz 2,3 W 1.18 0.87 Forward Voltage VF + 10 mA V 0.85 1.00 0.82 1.00 Reverse Leakage Current IR -100V µA 10 10 Input Third Order Intercept Point IIP3 F 1= 1000 MHz F2 = 1010 MHz Input Power = +20 dBm I bias = + 20 mA dBm 73 77 C.W. Thermal Resistance θ °C/W 145 115 Lifetime TL +10 mA / -6 mA ( 50% - 90% V ) nS 280 310 Parameter Symbol Conditions Units MADP-042408-13060 MADP-042908-13060 Typ. Max Typ Max Capacitance CT 1,3 - 10 V, 1 MHz 1 pF 0.38 0.50 0.05 0.15 Capacitance CT 1,3 - 10 V, 1 GHz 1,3 pF 0.39 0.05 Capacitance CT 1,3 - 40 V, 1 MHz 1 pF 0.36 0.50 0.04 0.15 Capacitance CT 1,3 - 40 V, 1 GHz 1,3 pF 0.37 0.05 Resistance RS 2,3 + 20 mA, 1 GHz 2,3 W 0.67 3.63 Resistance RS 2,3 + 50 mA, 1 GHz 2,3 W 0.61 3.02 Forward Voltage VF + 10 mA V 0.80 1.00 0.91 1.00 Reverse Leakage Current IR -100V µA 10 10 Input Third Order Intercept Point IIP3 F 1= 1000 MHz F2 = 1010 MHz Input Power = +20 dBm I bias = + 20 mA dBm 81 66 C.W. Thermal Resistance θ4 °C/W 100 185 Lifetime TL +10 mA / -6 mA ( 50% - 90% V ) nS 380 230 1. Total capacitance, CT, is equivalent to the sum of junction capacitance ,CJ , and parasitic capacitance, Cpar. 2. Series resistance RS is equivalent to the total diode resistance : RS = RJ ( Junction Resistance) + RC ( Ohmic Resistance) 3. RS and CT are measured on an HP4291A Impedance Analyzer with die mounted in an ODS-1134 package. 4. Theta (θ) is measured with the die mounted in an ODS-1134 package. |
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