1996

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

2SJ243

P-CHANNEL MOS FET

FOR SWITCHING

Document No. D11215EJ1V0DS00 (1st edition)

Date Published June 1996 P

Printed in Japan

PACKAGE DIMENSIONS (in mm)

0.3 ± 0.05

G

0.2

+0.1

–0

0.5

0.5

1.0

1.6 ± 0.1

D

S

0.6

0.75 ± 0.05

0 to 0.1

0.1

+0.1

–0.05

EQUIVALENT CIRCUIT

Source (S)

Internal diode

Gate protection

diode

Gate (G)

Drain (D)

PIN CONNECTIONS

S: Source

D: Drain

G: Gate

Marking: A1

The 2SJ243 is a P-channel vertical type MOS FET that is driven

at 2.5 V.

Because this MOS FET can be driven on a low voltage and

because it is not necessary to consider the drive current, the

2SJ243 is ideal for driving the actuator of power-saving systems,

such as VCR cameras and headphone stereo systems.

Moreover, the 2SJ243 is housed in a super small mini-mold

package so that it can help increase the mounting density on the

printed circuit board and lower the mounting cost, contributing to

miniaturization of the application systems.

FEATURES

•

Small mounting area: about 60 % of the conventional mini-mold

package (SC-70)

•

Can be directly driven by 3-V IC

•

Can be automatically mounted

The internal diode in the right figure is a parasitic diode.

The protection diode is to protect the product from damage

due to static electricity. If there is a danger that an extremely

high voltage will be applied across the gate and source in the

actual circuit, a gate protection circuit such as an external

constant-voltage diode is necessary.

PARAMETER

SYMBOL

TEST CONDITIONS

RATING

UNIT

Drain to Source Voltage

–30

V

Gate to Source Voltage

±7A

Drain Current (DC)

±100

mA

Drain Current (Pulse)

PW

≤ 10 ms

±200

mA

Duty cycle

≤ 50 %

Total Power Dissipation

× 0.64 mm, ceramic substrate used

200

mW

Channel Temperature

150

˚C

Operating Temperature

–55 to +80

˚C

Storage Temperature

–55 to +150

˚C