1PS76SB21_BAT721_SER_6

© NXP B.V. 2006. All rights reserved.

Product data sheet

Rev. 06 — 21 December 2006

3 of 11

NXP Semiconductors

1PS76SB21; BAT721 series

Schottky barrier diodes in small packages

3.

Ordering information

4.

Marking

[1]

* = -: made in Hong Kong

* = p: made in Hong Kong

* = t: made in Malaysia

* = W: made in China

5.

Limiting values

Table 4.

Ordering information

Type number

Package

Name

Description

Version

1PS76SB21

SC-76

plastic surface-mounted package; 2 leads

SOD323

BAT721

-

plastic surface-mounted package; 3 leads

SOT23

BAT721A

BAT721C

BAT721S

Table 5.

Marking codes

Type number

Marking code[1]

1PS76SB21

S1

BAT721

L7*

BAT721A

L8*

BAT721C

L9*

BAT721S

L0*

Table 6.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

Per diode

reverse voltage

-

40

V

forward current

-

200

mA

non-repetitive peak forward

current

half sine wave;

JEDEC method;

-1

A

junction temperature

-

125

°C

ambient temperature

−65

+150

°C

storage temperature

−65

+150

°C