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MPS5172 Datasheet(PDF) 1 Page - Continental Device India Limited

Part # MPS5172
Description  NPN SILICON PLANAR AMPLIFIER TRANSISTOR
PDF  4 Pages
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Manufacturer  CDIL [Continental Device India Limited]
Direct Link  http://www.cdilsemi.com
Logo CDIL - Continental Device India Limited

MPS5172 Datasheet(HTML) 1 Page - Continental Device India Limited

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NPN SILICON PLANAR AMPLIFIER TRANSISTOR
MPS5172
TO-92
Plastic Package
ABSOLUTE MAXIMUM RATINGS(Ta=25ºC unless specified otherwise)
DESCRIPTION
UNITS
Collector Emitter Voltage
V
Collector Base Voltage
V
Emitter Base Voltage
V
Collector Current Continuous
mA
Power Dissipation@ Ta=25ºC
mW
Derate Above 25ºC
mW/ ºC
Power Dissipation@ Tc=25ºC
W
Derate Above 25ºC
mW/ ºC
Operating And Storage Junction
Temperature Range
THERMAL RESISTANCE
Junction to ambient
ºC/W
Junction to case
ºC/W
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
Collector Emitter Voltage
VCEO
IC=10mA,IB=0
25
V
Collector Cut off Current
ICBO
VCB=25V, IE = 0
100
nA
VCB=25V, IE = 0
Ta= 100ºC
ICES
VCE=50V, VBE=0
100
nA
Emitter Cut off Current
IEBO
VBE=5V, IC = 0
100
nA
DC Current Gain
hFE *
VCE=10V,IC=10mA
100
500
Base Emitter (Sat) Voltage
VBE(sat)
IC=10mA,IB=1.0mA
0.75
V
Base Emitter (On) Voltage
VBE(on)
IC=10mA,IB= 10mA
0.5
1.2
V
Collector Emitter (Sat) Voltage
VCE(sat)
IC=10mA,IB=1.0mA
0.25
V
*Pulse Condition: = Width =300us, Duty Cycle = 2%.
VALUE
25
25
5
100
625
5.0
ICBO
200
83.3
-55 to +150
Tj, Tstg
ºC
1.5
12
TYP
MAX
UNITS
MIN
10
µA
SYMBOL
VCEO
VCBO
VEBO
IC
PD
PD
DESCRIPTION
SYMBOL
TEST CONDITION
Rth(j-a)
Rth(j-c)
E B
C
Continental Device India Limited
Data Sheet
Page 1 of 4
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company


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