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BU931ZP Datasheet(PDF) 1 Page - Savantic, Inc. |
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BU931ZP Datasheet(HTML) 1 Page - Savantic, Inc. |
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1 / 3 page ![]() SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BU931ZP DESCRIPTION ·With TO-3PN package ·DARLINGTON ·High breakdown voltage APPLICATIONS ·Application in high performance electronic car ignition PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 350 V VCEO Collector-emitter voltage Open base 350 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 20 A IB Base current 5 A PT Total power dissipation TC=25 125 W Tj Max.operating junction temperature 150 Tstg Storage temperature -40~150 THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-case Thermal resistance junction case 1.0 /W Fig.1 simplified outline (TO-3PN) and symbol |
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