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BU931ZP Datasheet(PDF) 2 Page - Savantic, Inc. |
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BU931ZP Datasheet(HTML) 2 Page - Savantic, Inc. |
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2 / 3 page ![]() SavantIC Semiconductor Product Specification 2 Silicon NPN Power Transistors BU931ZP CHARACT ERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCL Clamping voltage IC=0.1 A ;IB=0 350 500 V VCE(sat-1) Collector-emitter saturation voltage IC=7A ;IB=70mA 1.6 V VCE(sat-2) Collector-emitter saturation voltage IC=8A; IB=100m A 1.8 V VCE(sat-3) Collector-emitter saturation voltage IC=10A; IB=150m A 2.0 V VBE(sat-1) Base-emitter saturation voltage IC=8A; IB=100m A 2.2 V VBE(sat-2) Base-emitter saturation voltage IC=10A; IB=250m A 2.5 V VBE-1 Base-emitter on voltage IC=5A ; VCE=2V 1.67 V VBE-2 Base-emitter on voltage IC=10A ; VCE=2V 2.0 V ICL Clamping current VCE =350V; IB=0 0.25 mA ICE(off) Collector-emitter off state current VCC =16V; VBE=300mV Tj=125 0.5 mA IEBO Emitter cut-off current VEB=5V; IC=0 50 mA hFE DC current gain IC=5A ; VCE=2V 300 VF Diode forward voltage IF=10A 2.5 V |
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