2N5550 datasheet(2/4 Pages) CDIL

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NPN EPITAXIAL PLANAR SILICON HIGH VOLTAGE TRANSISTOR

2N5550

TO-92

Plastic Package

ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)

DESCRIPTION

SYMBOL TEST CONDITION

MIN

TYP

MAX

UNITS

Collector Base Voltage

VCEO*IC=1mA,IB=0

140

Collector Base Voltage

VCBO

IC=100µA,IE=0

160

Emitter Base Voltage

VEBO

IE=10µA, IC=0

Collector Cut off Current

ICBO

VCB=100V, IE = 0

100

Ta=100

VCB =100V, IE=0

100

µA

Emitter Cut off Current

IEBO

VBE=4V, IC = 0

µA

DC Current Gain

hFE*VCE=5V,IC=1mA

VCE=5V,IC=10mA

250

VCE=5V,IC=50mA

Base Emitter Saturation Voltage

VBE(sat)*

IC=10mA,IB=1mA

1.0

IC=50mA,IB= 5mA

1.2

Collector Emitter Saturation Voltage

VCE(sat)*

IC=10mA,IB=1mA

0.15

IC=50mA,IB=5mA

0.25

DYNAMIC CHARACTERISTICS

Small Signal Current Gain

l hfe l

IC=1mA, VCE=10V

200

f=1KHz

Transition Frequency

IC=10mA, VCE=10V

f=100MHz

100

300

MHz

Output Capacitance

Cobo

IE=0, VCB=10V

f=1MHz

6.0

Input Capacitance

Cibo

Ic=0, VEB=0.5V

f=1MHz

Noise Figure

VCE =5V,IC=250µA10

R=1

Ω,f=10H

Z to15.7kHz

*Pulse Condition: Width = 300

µs, Duty Cycle= 2%.

Continental Device India Limited

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