2N5550 datasheet(1/4 Pages) CDIL

Part #	2N5550

Description	NPN EPITAXIAL PLANAR SILICON HIGH VOLTAGE TRANSISTOR

PDF	4 Pages

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Manufacturer	CDIL [Continental Device India Limited]

Direct Link	http://www.cdilsemi.com

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NPN EPITAXIAL PLANAR SILICON HIGH VOLTAGE TRANSISTOR

2N5550

TO-92

Plastic Package

High Voltage NPN Transistor For General Purpose and Telephony Applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25ºC unless specified otherwise)

DESCRIPTION

SYMBOL

VALUE

UNITS

Collector Emitter Voltage

VCEO

140

V

Collector Base Voltage

VCBO

160

V

Emitter Base Voltage

VEBO

6V

Collector Current Continuous

IC

600

mA

Power Dissipation@ Ta=25ºC

PD

625

mW

Derate Above 25ºC

5.0

mW/ºC

Power Dissipation@ Tc=25ºC

PD

1.5

W

Derate Above 25ºC

12

mW/ºC

Operating And Storage Junction

Tj, Tstg

-55 to +150

ºC

Temperature Range

THERMAL RESISTANCE

Junction to ambient

Rth(j-a) (1)

357

ºC/W

Junction to case

Rth(j-c)

125

ºC/W

(1) Rth (j-a) is measured with the device soldered into a typical printed circuit board

Continental Device India Limited

Data Sheet

Page 1 of 4

Continental Device India Limited

An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company

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