| Electronic Components Datasheet Search |
|
MAAM26100 Datasheet(PDF) 1 Page - M/A-COM Technology Solutions, Inc. |
|
|
|||||||||||||||||||||||||||||
MAAM26100 Datasheet(HTML) 1 Page - M/A-COM Technology Solutions, Inc. |
|
1 / 5 page ![]() 1 GaAs MMIC Power Amplifier 2.0 - 6.5 GHz Rev. V7 MAAM26100 • North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400 • India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. Features Saturated Power: 30.5 dBm Typical Gain: 19 dB Typical Power Added Efficiency: 30% On-Chip Bias Network DC Decoupled RF Input and Output RoHS* Compliant Description The MAAM26100 is a GaAs MMIC two stage high efficiency power amplifier. The MAAM26100 is a fully monolithic design which eliminates the need for external circuitry in 50-ohm systems. The MAAM26100 is ideally suited for driver amplifiers and transmitter outputs in UMTS applications, test equipment, electronic warfare jammers, missile subsystems and phased array radars. The MAAM26100 is fabricated using a mature 0.5-micron gate length GaAs process. The process features full passivation for increased performance reliability. Ordering Information Part Number Package MAAM26100 Die Die Absolute Maximum Ratings 1,2 Parameter Absolute Maximum VDD +9 V VG1, VG2 -2.5 V to -0.8 V VGG 3 -6 V to -3 V RF Input Power +17 dBm Channel Temperature 150°C Storage Temperature -65°C to +150°C 1. Exceeding any one or combination of these limits may cause permanent damage to this device and will void product warranty. 2. M/A-COM does not recommend sustained operation near these survivability limits. 3. VGG rating applies when using the optional on-chip resistor network. |
Similar Part No. - MAAM26100 |
|
Similar Description - MAAM26100 |
|
|
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |