2SJ355 datasheet(4/6 Pages) NEC

Part #	2SJ355

Description	P-CHANNEL MOS FET FOR HIGH SWITCHING

PDF	6 Pages

Scroll/Zoom	100%

Manufacturer	NEC [NEC]

Direct Link	http://www.nec.com/

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4 / 6 page

2SJ355

TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH

1 m

1 000

100

PW - Pulse Width -s

10 m

100 m

100

Single Pulse

Using ceramic board

of 7.5 cm2

× 0.7 mm

SOURCE TO DRAIN DIODE

FORWARD VOLTAGE

–0.2

–10

–1

–0.1

–0.01

–0.001

–0.0001

VSD - Source to Drain Voltage - V

CAPACITANCE vs.

DRAIN TO SOURCE VOLTAGE

–1

10 000

1 000

100

VDS - Drain to Source Voltage- V

SWITCHING CHARACTERISTICS

–0.1

1 000

100

ID - Drain Current -A

REVERSE RECOVERY TIME vs.

DIODE FORWARD CURRENT

–0.1

1 000

100

IF - Diode Forward Current - A

–1.2

–0.4

–0.6

–0.8

–1.0

VGS = 0

Pulsed

Ciss

Coss

Crss

–100

–10

VGS = 0

f = 1 MHz

–10

–1

td(off)

td(on)

VDD = 25 V

VGS(on) = –10 V

–10

–0.5

–1

–5

VGS = 0

di/dt = 50 A/ s

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