NPN SILICON PLANAR TRANSISTOR

2N2484

TO-18

This transistors is primarily intended for use in high performance, low level,

low noise amplifier applications

ABSOLUTE MAXIMUM RATINGS

DESCRIPTION

SYMBOL

VALUE

UNIT

Collector -Emitter Voltage

VCEO

60

V

Collector -Base Voltage

VCBO

60

V

Emitter -Base Voltage

VEBO

6.0

V

Collector Current Continuous

IC

50

mA

Power Dissipation @Ta=25 degC

PD

360

mW

Derate Above 25 deg C

2.06

mw/deg C

Power Dissipation @Tc=25 degC

PD

1.20

W

Derate Above 25 deg C

6.85

mw/deg C

Operating And Storage Junction

Tj, Tstg

-65 to +200

deg C

Temperature Range

THERMAL RESISTANCE

Junction to Case

Rth(j-c)

146

deg C/W

Junction to Ambient in Free Air

Rth(j-a) *

485

deg C/W

Lead Temperature

TL

300

deg C

1/16" from Case for 10 Seconds

ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)

DESCRIPTION

SYMBOL

TEST CONDITION

Min

MAX UNIT

Collector -Emitter Voltage

VCEO**

IC=10mA,IB=0

60

-

V

Collector -Base Voltage

VCBO

IC=10uA.IE=0

60

-

V

Emitter -Base Voltage

VEBO

IE=10uA, IC=-0

6.0

-

V

Collector-Cut off Current

ICBO

VCB=45V, IE=0

-

10

nA

Ta=150 deg C

VCB=45V, IE=0

-

10

uA

Emitter-Cut off Current

IEBO

VEB=5V, IC=0

-

10

nA

Collector Emitter Saturation Voltage

VCE(Sat)

IC=1mA,IB=0.1mA

-

0.35

V

Base Emitter on Voltage

VBE(on)

IC=0.1mA, VCE=5V

0.5

0.7

V

Continental Device India Limited

Data Sheet

Page 1 of 3

Continental Device India Limited

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