e

1

Description

The 20175 is a class AB, NPN common emitter RF power transistor

intended for 26 Vdc operation from 1.9 to 2.0 GHz. It is rated at 55

watts minimum output power and may be used for both CW and PEP

applications. Ion implantation, nitride surface passivation and gold

metallization are used to ensure excellent device reliability. 100% lot

traceability is standard.

PTB 20175

55 Watts, 1.9–2.0 GHz

Cellular Radio RF Power Transistor

20175

LOT

CODE

10

20

30

40

50

60

70

2468

10

12

14

Input Power (Watts)

f = 2 GHz

Typical Output Power vs. Input Power

Package 20223

Maximum Ratings

Parameter

Symbol

Value

Unit

Collector-Emitter Voltage

55

Vdc

Collector-Emitter Voltage

55

Vdc

Emitter-Base Voltage (collector open)

4

Vdc

Collector Current (continuous)

8

Adc

Total Device Dissipation at Tflange = 25° C

233

W

Above 25°C derate by

1.33

W/°C

Storage Temperature Range

Tstg

–40 to +150

°C

Thermal Resistance (Tflange = 70° C)

.75

°C/W

9/28/98