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NPA1003 Datasheet(PDF) 2 Page - M/A-COM Technology Solutions, Inc.

Part # NPA1003
Description  Gallium Nitride 28V, 5W, 20-1500 MHz MMIC Amplifier
PDF  8 Pages
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Manufacturer  MA-COM [M/A-COM Technology Solutions, Inc.]
Direct Link  http://www.macomtech.com
Logo MA-COM - M/A-COM Technology Solutions, Inc.

NPA1003 Datasheet(HTML) 2 Page - M/A-COM Technology Solutions, Inc.

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NPA1003
NDS-030 Rev. 4, 011414
Symbol
Parameter
Min
Typ
Max
Units
Off Characteristics
IDLK
Drain-Source Leakage Current
(VGS=-8V, VDS=100V)
-
-
2
mA
IGLK
Gate-Source Leakage Current
(VGS=-8V, VDS=0V)
-
-
1
mA
On Characteristics
VT
Gate Threshold Voltage
(VDS=28V, ID=2mA)
-2.5
-1.6
-0.5
V
VGSQ
Gate Quiescent Voltage
(VDS=28V, ID=100mA)
-2.1
-1.2
-0.3
V
RON
On Resistance
(VDS=2V, ID=15mA)
-
1.6
-
ID, MAX
Maximum Drain Current
(VDS=7V pulsed, 300µS pulse width,
0.2% Duty Cycle)
-
1.5
-
A
DC Specifications: TC = 25°C
Thermal Resistance Specification:
Symbol
Parameter
Typ
Units
RJC
Thermal Resistance (Junction-to-Case),
TJ = 180 °C
12
°C/W
Absolute Maximum Ratings: Not simultaneous, TC = 25°C unless otherwise noted
Symbol
Parameter
Max
Units
VDS
Drain-Source Voltage
100
V
VGS
Gate-Source Voltage
-10 to 3
V
IG
Gate Current
4
mA
PT
Total Device Power Dissipation (Derated above 25°C)
14.5
W
TSTG
Storage Temperature Range
-65 to 150
°C
TJ
Operating Junction Temperature
200
°C
HBM
Human Body Model ESD Rating (per JESD22-A114)
Class 1A
MSL
Moisture sensitivity level (per IPC/JEDEC J-STD-020)
MSL-1
Junction Temperature (TJ) measured using IR Microscopy, Case Temperature (TC) measured using a thermocouple embedded in
heatsink.



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