NPT1010 datasheet(3/10 Pages) MA-COM

Part #	NPT1010

Description	Gallium Nitride 28V, 100W RF Power Transistor

PDF	10 Pages

Scroll/Zoom	100%

Manufacturer	MA-COM [M/A-COM Technology Solutions, Inc.]

Direct Link	http://www.macomtech.com

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3 / 10 page

NPT1010

NDS-023 Rev. 3, April 2013

NPT1010

Page 3

Frequency (MHz)

ZS (W)

ZL (W)

PSAT (W)

GSS (dB)

Drain Efficiency @ PSAT (%)

500

2.8 + j2.2

2.7 + j2.0

100

24.5

71%

900

1.1 - j0.5

1.9 + j0.6

100

21.0

70%

1500

1.1 - j3.6

2.0 - j1.2

100

17.0

63%

2000

1.1 - j4.9

1.9 - j3.8

14.5

59%

Load-Pull Data, Reference Plane at Device Leads

VDS=28V, IDQ=700mA, TA=25°C unless otherwise noted

73%

49dBm

Figure 3 - Optimum Impedances for CW

Performance. Z0 = 5 Ω

Figure 4 - Load-Pull Contours, 500MHz,

PIN = 27dBm, ZS = 2.8 + j2.2 Ω

68%

49dBm

Figure 5 - Load-Pull Contours, 900MHz,

PIN = 32.5dBm, ZS = 1.1 - j0.5 Ω

Table 1: Optimum Source and Load Impedances for CW Gain, Drain Efficiency, and Output Power Performance

ZS is the source impedance

presented to the device.

ZL is the load impedance

presented to the device.

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