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NPT2018 Datasheet(PDF) 2 Page - M/A-COM Technology Solutions, Inc.

Part # NPT2018
Description  Gallium Nitride 48V, 12.5W, DC-6 GHz HEMT
PDF  5 Pages
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Manufacturer  MA-COM [M/A-COM Technology Solutions, Inc.]
Direct Link  http://www.macomtech.com
Logo MA-COM - M/A-COM Technology Solutions, Inc.

NPT2018 Datasheet(HTML) 2 Page - M/A-COM Technology Solutions, Inc.

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Page 2
NPT2018
Preliminary
Preliminary Datasheet
NDS-042 Rev. 2, 020314
Symbol
Parameter
Min
Typ
Max
Units
Off Characteristics
IDLK
Drain-Source Leakage Current
(VGS=-8V, VDS=160V)
-
-
3
mA
IGLK
Gate-Source Leakage Current
(VGS=-8V, VDS=0V)
-
-
1.5
mA
On Characteristics
VT
Gate Threshold Voltage
(VDS=48V, ID=3mA)
-2.5
-1.5
-0.5
V
VGSQ
Gate Quiescent Voltage
(VDS=48V, ID=75mA)
-2.1
-1.2
-0.3
V
RON
On Resistance
(VDS=2V, ID=22mA)
-
1.6
-
ID, MAX
Maximum Drain Current
(VDS=7V pulsed, 300µS pulse width,
0.2% Duty Cycle)
-
1.75
-
A
DC Specifications: TC = 25°C
Thermal Resistance Specification:
Symbol
Parameter
Typ
Units
RJC
Thermal Resistance (Junction-to-Case),
TJ = 200 °C
6.5
°C/W
Absolute Maximum Ratings: Not simultaneous, TC = 25°C unless otherwise noted
Symbol
Parameter
Max
Units
VDS
Drain-Source Voltage
160
V
VGS
Gate-Source Voltage
-10 to 3
V
IG
Gate Current
6
mA
PT
Total Device Power Dissipation (Derated above 25°C)
26.9
W
TSTG
Storage Temperature Range
-65 to 150
°C
TJ
Operating Junction Temperature
200
°C
HBM
Human Body Model ESD Rating (per JESD22-A114)
Class 1A
MSL
Moisture sensitivity level (per IPC/JEDEC J-STD-020)
TBD
Junction Temperature (TJ) measured using IR Microscopy, Case Temperature (TC) measured using a thermocouple embedded in
heatsink.



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