Data Sheet D11264EJ1V0DS00

7

2SJ492

PACKAGE DRAWING (Unit: mm)

Remark

The diode connected between the gate and source of the transistor serves as a protector against ESD.

When this device actually used, an additional protection circuit is externally required if a voltage

exceeding the rated voltage may be applied to this device.

EQUIVALENT CIRCUIT

Source

Body

Diode

Gate

Protection

Diode

Gate

Drain

1) TO-220AB (MP-25)

4.8 MAX.

1.Gate

2.Drain

3.Source

4.Fin (Drain)

1 2 3

10.6 MAX.

10.0

3.6±0.2

4

1.3±0.2

0.75±0.1

2.54 TYP.

2.54 TYP.

1.3±0.2

0.5±0.2

2.8±0.2

φ

2) TO-262 (MP-25 Fin Cut)

4.8 MAX.

1.Gate

2.Drain

3.Source

4.Fin (Drain)

1

2

3

(10)

4

1.3±0.2

0.75±0.3

2.54 TYP.

2.54 TYP.

1.3±0.2

0.5±0.2

2.8±0.2

3) TO-263 (JEDEC TYPE: MP-25ZJ)

(10)

1.4±0.2

2.54 TYP.

2.54 TYP.

123

4

4.8 MAX.

1.3±0.2

0.5±0.2

(0.5R)

(0.8R)

1.Gate

2.Drain

3.Source

4.Fin (Drain)

0.7±0.2