2SJ492 datasheet(2/8 Pages) NEC

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Data Sheet D11264EJ1V0DS00

2SJ492

ELECTRICAL CHARACTERISTICS (TA = 25 °C)

CHARACTERISTICS

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Drain to Source On-state Resistance

RDS(on)1

VGS = –10 V, ID = –10 A

100

Ω

RDS(on)2

VGS = –4 V, ID = –10 A

120

185

Ω

Gate to Source Cut-off Voltage

VGS(off)

VDS = –10 V, ID = –1 mA

–1.0

–1.5

–2.0

Forward Transfer Admittance

| yfs |VDS = –10 V, ID = –10 A

5.0

Drain Leakage Current

IDSS

VDS = –60 V, VGS = 0 V

–10

µA

Gate to Source Leakage Current

IGSS

VGS =

# 20 V, VDS = 0 V

# 10

µA

Input Capacitance

Ciss

VDS = –10 V

1210

Output Capacitance

Coss

VGS = 0 V

520

Reverse Transfer Capacitance

Crss

f = 1 MHz

180

Turn-on Delay Time

td(on)

ID = –10 A16

Rise Time

VGS(on) = –10 V

140

Turn-off Delay Time

td(off)

VDD = –30 V90

Fall Time

RG = 10

Ω

Total Gate Charge

ID = –20 A42

Gate to Source Charge

QGS

VDD = –48 V8.0

Gate to Drain Charge

QGD

VGS = –10 V10

Body Diode Forward Voltage

VF(S-D)

IF = –20 A, VGS = 0 V1.0

Reverse Recovery Time

trr

IF = –20 A, VGS = 0 V

125

Reverse Recovery Charge

Qrr

di/dt = 50 A /

µs

280

TEST CIRCUIT 1 AVALANCHE CAPABILITY

RG = 25

Ω

VDD

VGS = –20

→ 0 V

BVDSS

IAS

VDS

Starting Tch

VDD

D.U.T.

TEST CIRCUIT 3 GATE CHARGE

PG.

Ω

D.U.T.

VDD

IG = 2 mA

90 %

VGS(on)

90 %

td(off)

10 %

toff

TEST CIRCUIT 2 SWITCHING TIME

PG.

VGS

D.U.T.

VDD

τ = 1 s

Duty Cycle

≤ 1 %

VGS

Wave Form

VGS

10 %

90 %

td(on)

RG = 10

Ω

ton

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