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PN4355 Datasheet(PDF) 2 Page - Continental Device India Limited

Part # PN4355
Description  PNP SILICON PLANAR EPITAXIAL TRANSISTORS
PDF  4 Pages
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Manufacturer  CDIL [Continental Device India Limited]
Direct Link  http://www.cdilsemi.com
Logo CDIL - Continental Device India Limited

PN4355 Datasheet(HTML) 2 Page - Continental Device India Limited

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PNP SILICON PLANAR EPITAXIAL TRANSISTORS
PN4354
PN4355
PN4356
TO-92
Plastic Package
ELECTRICAL CHARACTERISTICS (Ta=25°C Unless Otherwise Specified)
DESCRIPTION
SYMBOL TEST CONDITION
4354
4355
4356
UNITS
Base Emitter Sat Voltage
VBE(sat)* IC=150mA,IB=15mA
<0.9
<0.9
<0.9
V
IC=500mA,IB=50mA
<1.1
<1.1
<1.1
V
IC=1A,IB=100mA
<1.2
V
PN4355
VBE(on)* IC=500mA,VCE=0.5V
<1.1
<1.1
<1.1
V
Base Emitter On Voltage
IC=1A,VCE=1V
<1.2
V
PN4355
SMALL-SIGNAL
SYMBOL TEST CONDITION
4354
4355
4356
UNITS
DYNAMIC CHARACTERISTICS
Ccb
IE=0, VCB=10V,
<30
<30
<30
PF
Collector to Base Capacitance
f=1.0MHZ
Ceb
IC=0, VEB=0.5V,
<110
<110
<110
PF
Emitter to Base Capacitance
f=1.0MHZ
ton
IC =500mA,IB1 =50mA,
<100
<100
<100
PF
Turn On Time
VCC =30V
toff
IC =500mA,IB1=IB2 =50mA,
Turn off Time
VCC =30V
<400
<400
<400
ns
Noise Figure
NF
VCE =10V,IC=100uA
<3.0
<3.0
<3.0
dB
RS=1KΩ,f=1kHZ,
BW = 1HZ
*Pulse Condition: = 300us, Duty Cycle = 1%.
Continental Device India Limited
Data Sheet
Page 2 of 4
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