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PN4355 Datasheet(PDF) 1 Page - Continental Device India Limited

Part # PN4355
Description  PNP SILICON PLANAR EPITAXIAL TRANSISTORS
PDF  4 Pages
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Manufacturer  CDIL [Continental Device India Limited]
Direct Link  http://www.cdilsemi.com
Logo CDIL - Continental Device India Limited

PN4355 Datasheet(HTML) 1 Page - Continental Device India Limited

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PNP SILICON PLANAR EPITAXIAL TRANSISTORS
PN4354
PN4355
PN4356
TO-92
Plastic Package
General Purpose Amplifiers
DESCRIPTION
SYMBOL
4354
4355
4356
UNITS
Collector Emitter Voltage
VCEO
60
60
80
V
Collector Base Voltage
VCBO
60
60
80
V
Emitter Base Voltage
VEBO
5V
Collector Current - Continuous
IC
500
mA
Power Dissipation@Ta=25°C
PD
625
mW
Power Dissipation@ Tc=25°C
PD
1.0
mW
Operating And Storage Junction
Tj, Tstg
-55 to +150
°C
Temperature Range
ELECTRICAL CHARACTERISTICS (Ta=25°C Unless Otherwise Specified)
DESCRIPTION
SYMBOL TEST CONDITION
4354
4355
4356
UNITS
Collector Emitter Voltage
VCEO(sus)* IC=10mA,IB=0 (pulsed)
>60
>60
>80
V
Collector Base Voltage
VCBO
IC=10uA,IE=0
>60
>60
>80
V
Emitter Base Voltage
VEBO
IE=10uA,IC=0
>5
V
Collector-Cut off Current
ICBO
VCB=50V, IE = 0
<50
nA
VcB=50V, IE = 0,
Ta =75°C
<5
uA
Emitter Cut off Current
IEBO
VBE =4V,IC= 0
<100
nA
DC Current Gain
hFE *VCE=10V,IC=100uA
>25
>60
>25
VCE=10V,IC=1mA
>40
>75
>40
VCE=10V,IC=10mA
50-500
100-400
50-250
VCE=10V,IC=100mA
>40
>75
>40
VCE=10V,IC=500mA
>30
>75
>30
Commom Emitter Small
Signal Current Gain
l hfe lIC=50mA, VCE=10V
1.0-5.0
1.0 - 1.5
1.0 - 5.0
f=100MHz
Collector Emitter Sat Voltage
VCE(sat) * IC=150mA,IB=15mA
<0.15
<0.15
<0.15
V
IC=500mA,IB=50mA
<0.5
<0.5
<0.5
V
PN4355
IC=1A,IB=100mA
<1.0
V
Continental Device India Limited
Data Sheet
Page 1 of 4
E B
C
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company


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