MJE243 datasheet(1/4 Pages) CDIL

Part #	MJE243

Description	NPN EPITAXIAL SILICON POWER TRANSISTOR

PDF	4 Pages

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Manufacturer	CDIL [Continental Device India Limited]

Direct Link	http://www.cdilsemi.com

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NPN EPITAXIAL SILICON POWER TRANSISTOR

MJE243

TO-126

Plastic Package

Complementary MJE253

Designed for Low Power Audio Amplifier and Low-Current, High-Speed Switching Applications

ABSOLUTE MAXIMUM RATINGS

DESCRIPTION

SYMBOL

Value

UNIT

Collector Base Voltage

VCBO

100

V

Collector Emitter Voltage

VCEO

100

V

Emitter Base Voltage

VEBO

7.0

V

Continuous Collector Current

IC

4.0

A

Peak

8.0

Base Current

IB

1.0

A

Total Power Dissipation @ Tc=25 ºC

PD

15

W

Derate Above 25ºC

0.12

W/ºC

Total Power Dissipation @ Ta=25 ºC

PD

1.5

W

Derate Above 25ºC

0.012

W/ºC

Operating and Storage Junction

Tj, Tstg

- 65 to +150

ºC

Temperature Range

Thermal Characteristics

Junction to Case

Rth(j-c)

8.34

ºC/W

Junction to Ambient

Rth(j-a)

83.4

ºC/W

ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise )

DESCRIPTION

SYMBOL

TEST CONDITION

MIN

TYP

MAX

UNIT

Collector Emitter Sustaning Voltage

VCEO (Sus)

IC=10mA, IB=0

100

V

Collector Cut off Current

ICBO

VCB=100V, IE=0

0.1

µA

TC=125ºC

VCB=100V, IE=0

0.1

mA

Emitter Cut off Current

IEBO

VBE=7V, IC=0

0.1

µA

DC Current Gain

hFE

IC=200mA, VCE=1V

40

180

IC=1A, VCE=1V

15

Collector Emitter Saturation Voltage

VCE (Sat)

IC=500mA, IB=50mA

0.3

V

IC=1A, IB=100mA

0.6

Base Emitter Saturation Voltage

VBE (Sat)

IC=2A, IB=200mA

1.8

V

Base Emitter on Voltage

VBE (on)

IC=500mA, VCE=1V

1.5

V

B

C

E

Continental Device India Limited

Data Sheet

Page 1 of

4

Continental Device India Limited

An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company

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