2SJ495 datasheet(5/8 Pages) NEC

5 / 8 page

2SJ495

DRAIN TO SOURCE ON-STATE RESISTANCE vs.

CHANNEL TEMPERATURE

Tch - Channel Temperature - °C

SOURCE TO DRAIN DIODE

FORWARD VOLTAGE

VSD - Source to Drain Voltage - V

CAPACITANCE vs. DRAIN TO

SOURCE VOLTAGE

VDS - Drain to Source Voltage - V

SWITCHING CHARACTERISTICS

ID - Drain Current - A

–0.1

–50

100

150

ID = –15 A

–1

–10

–100

–1000

–1.0

Pulsed

100

–0.1

1000

10000

100000

–1

–10

–100

VGS = 0

f = 1 MHz

100

1 000

–1

–10

–100

REVERSE RECOVERY TIME vs.

DRAIN CURRENT

IF - Diode Current - A

di/dt = 50 A/ s

VGS = 0

–0.1

–1

–10

–100

–2.0

–3.0

VDD = –30 V

VGS = –10 V

RG =10

Ω

DYNAMIC INPUT/OUTPUT CHARACTERISTICS

QG - Gate Charge - nC

120

160

–20

–40

–60

–80

VGS = –4 V

Ciss

Coss

Crss

VDD=–48 V

–30 V

–15 V

VDS

td(off)

VGS = –4 V

VGS = 0

1000

100

–2

–4

–6

–8

–12

–14

–10

ID = –30A

td(on)

VGS

VGS=-10 V

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