2SJ495 datasheet(2/8 Pages) NEC

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2SJ495

ELECTRICAL CHARACTERISTICS (TA = 25

°C)

CHARACTERISTICS

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Drain to Source On–state Resistance

RDS(on)1

VGS = –10 V, ID = –15 A

Ω

RDS(on)2

VGS = –4 V, ID = –15 A

Ω

Gate to Source Cutoff Voltage

VGS(off)

VDS = –10 V, ID = –1 mA

–1.0

–1.5

–2.0

Forward Transfer Admittance

| yfs |VDS = –10 V, ID = –15 A

Drain Leakage Current

IDSS

VDS = –60 V, VGS = 0

–10

µA

Gate to Source Leakage Current

IGSS

VGS =

m 20 V, VDS = 0

m10

µA

Input Capacitance

Ciss

VDS = –10 V

4120

Output Capacitance

COSS

VGS = 0

1750

Reverse Transfer Capacitance

Crss

f = 1 MHz

580

Turn-On Delay Time

td(on)

ID = –15 A

Rise Time

VGS(on) = –10 V

220

Turn-Off Delay Time

td(off)

VDD = –30 V

600

Fall Time

RG = 10

Ω

380

Total Gate Charge

ID = –30 A

140

Gate to Source Charge

QGS

VDD = –48 V

Gate to Drain Charge

QGD

VGS = –10 V

Body Diode Forward Voltage

VF(S-D)

IF = 30 A, VGS = 0

0.8

1.5

Reverse Recovery Time

trr

IF = 30 A, VGS = 0

160

Reverse Recovery Charge

Qrr

di/dt = 100 A/

µs

400

Test Circuit 1 Switching Time

Test Circuit 2 Gate Charge

D.U.T.

PG.

VDD

RG = 10

Ω

VGS

t = 1 s

Duty Cycle

≤ 1%

VGS

Wave Form

VGS

VGS(on)

10 %

90 %

td(off)

td(on)

ton

toff

10 %

Wave Form

D.U.T.

IG = 2 mA

PG.

VDD

Ω

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