LP3000

Phone:

(408) 988-1845

http://

www.filss.com

Revised:

1/18/01

Fax:

(408) 970-9950

Email:

sales@filss.com

• FEATURES

♦ 33.5 dBm Output Power

at 1-dB Compression at 18 GHz

♦ 7 dB Power Gain at 18 GHz

♦ 30.5 dBm Output Power

at 1-dB Compression at 3.3V

♦ 45% Power-Added Efficiency

• DESCRIPTION AND APPLICATIONS

The LP3000 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs)

Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-

write 0.25

µm by 3000 µm Schottky barrier gate. The recessed “mushroom” gate structure

minimizes parasitic gate-source and gate resistances. The epitaxial structure and processing have

been optimized for reliable high-power applications. The LP3000 is also available in a P100 flanged

ceramic package and in the low cost plastic SOT89 package.

Typical applications include commercial and other high-performance power amplifiers.

• ELECTRICAL SPECIFICATIONS @ T

°C

Parameter

Symbol

Test Conditions

Min

Typ

Max

Units

Saturated Drain-Source Current

800

1060

1100

mA

Power at 1-dB Compression

P-1dB

33

33.5

dBm

Power Gain at 1-dB Compression

G-1dB

4

6

dB

Power-Added Efficiency

PAE

45

%

Maximum Drain-Source Current

1700

mA

Transconductance

725

900

mS

Gate-Source Leakage Current

15

125

µA

Pinch-Off Voltage

-0.25

-1.2

-2.0

V

Gate-Source Breakdown

Voltage Magnitude

-12

-15

V

Gate-Drain Breakdown

Voltage Magnitude

-12

-16

V

Thermal Resistivity

Θ

JC

20

°C/W

frequency=18 GHz

DRAIN

BOND

PAD (4X)

SOURCE

BOND

PAD (2x)

GATE

BOND

PAD (4X)

DIE SIZE: 28.3X16.5 mils (720x420

µm)

DIE THICKNESS: 2.6 mils (65

µm)

BONDING PADS: 1.9X2.4 mils (50x60

µm)