Filtronic

LP3000/LPV3000

Solid State

2W Power PHEMT

Phone: (408) 988-1845

Internet: http://www.filtronicsolidstate.com

Fax: (408) 970-9950

FEATURES

DIE SIZE: 28.3 x 16.5 mils (720 x 420

µm)

DIE THICKNESS: 2.6 mils (65

µm typ.)

BONDING PADS: 1.9 x 2.4 mils (50 x 60

µm typ.)

DESCRIPTION AND APPLICATIONS

The LP3000 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron

Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25

µm by 3000 µm Schottky barrier gate. The

recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistances. The epitaxial structure and

available with plated source via-holes (LPV 3000) as an option for improved high-frequency performance. Also available in

a ceramic flanged package (P100) and ball grid array package.

Typical applications include commercial and military high-performance power amplifiers, including SATCOM uplink

transmitters, PCS/Cellular low-voltage high-efficiency output amplifiers, and medium-haul digital radio transmitters. The

LPV 3000/LP 3000 may be procured in a variety of grades, depending upon specific user requirements. Standard lot

screening is patterned after MIL-STD-19500, JANC grade. Space-level screening to FSS JANS grade is also available.

°C)

SYMBOLS

PARAMETERS

MIN

TYP

MAX

UNITS

Saturated Drain-Source Current

800

1060

1100

mA

Output Power at 1dB Gain Compression

33.0

33.5

dBm

Power Gain at 1dB Gain Compression

4.0

6.0

6.0

7.0

dB

dB

η

ADD

Power-Added Efficiency (typ. for Class A operation)

45

%

Maximum Drain-Source Current

1700

mA

Transconductance

725

900

mS

Pinch-Off Voltage

-0.25

-1.2

-2.0

V

Gate-Source Leakage Current

15

125

µA

Gate-Source Breakdown Voltage

-12

-15

V

Gate-Drain Breakdown Voltage

-12

-16

V

Θ

J

Thermal Resistivity

20

°C/W

Get Curtice Model

DSS-027 WG

DRAIN PAD

(x4)

SOURCE BOND

PAD (x2)

GATE PAD

(x4)