FZT558

Document number: DS33139 Rev.3 - 2

2 of 6

www.diodes.com

November 2012

© Diodes Incorporated

FZT558

A Product Line of

Diodes Incorporated

Characteristic

Symbol

Value

Unit

Collector-Base Voltage

-400

V

Collector-Emitter Voltage

-400

V

Emitter-Base Voltage

-7

V

Continuous Collector Current

-200

mA

Characteristic

Symbol

Value

Unit

Power Dissipation

(Note 5)

2

W

(Note 6)

3

W

Thermal Resistance, Junction to Ambient

(Note 5)

62.5

°C/W

(Note 6)

41.7

°C/W

Thermal Resistance, Junction to Leads (Note 7)

19.41

°C/W

Operating and Storage Temperature Range

-55 to +150

°C

Notes:

5. For a device surface mounted on 25mm X 25mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions; device measured when

operating in steady state condition.

6. Same as note (5), except the device is mounted on 50mm X 50mm single sided 2oz weight copper.

7. Thermal resistance from junction to solder-point (at the end of the collector lead).

Thermal Characteristics and Derating Information

100µ

1m

10m 100m

1

10

100

1k

0

10

20

30

40

50

60

70

0

20

40

60

80

100 120 140 160

0.0

0.5

1.0

1.5

2.0

2.5

3.0

50mm x 50mm

2oz FR4

25mm x 25mm

2oz FR4

Derating Curve

Temperature (°C)

100µ

1m

10m 100m

1

10

100

1k

0

10

20

30

40

50

T

amb

=25°C

25mm x 25mm

2oz FR4

Transient Thermal Impedance

D=0.5

D=0.2

D=0.1

Single Pulse

D=0.05

Pulse Width (s)

100µ

1m

10m 100m

1

10

100

1k

1

10

100

25mm x 25mm

2oz FR4

50mm x 50mm

2oz FR4

Single Pulse

T

amb

=25°C

Pulse Power Dissipation

Pulse Width (s)

D=0.1

D=0.05

Single Pulse

D=0.2

D=0.5

T

amb

=25°C

50mm x 50mm

2oz FR4

Transient Thermal Impedance

Pulse Width (s)