FZT558 datasheet(3/6 Pages) DIODES

3 / 6 page

FZT558

Document number: DS33139 Rev.3 - 2

3 of 6

www.diodes.com

November 2012

FZT558

A Product Line of

Diodes Incorporated

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

Collector-Base Breakdown Voltage

BVCBO

-400

−

IC = -100µA

Collector-Emitter Breakdown Voltage (Note 8)

BVCEO

-400

−

IC = -1mA

Emitter-Base Breakdown Voltage

BVEBO

-7

−

IE = -100µA

Collector Cut-off Current

ICBO

−

-100

VCB = -320V

Collector Cut-off Current

ICES

−

-100

VCES = -320V

Emitter Cut-off Current

IEBO

−

-100

VEB = -5V

Collector-Emitter Saturation Voltage (Note 8)

VCE(sat)

−

-0.2

-0.5

IC = -20mA, IB = -2mA

IC = -50mA, IB = -6mA

Base-Emitter Saturation Voltage (Note 8)

VBE(sat)

−

-0.9

IC = -50mA, IB = -5mA

Base-Emitter Turn-On Voltage (Note 8)

VBE(on)

−

-0.9

IC = -50mA, VCE = -10V

DC current transfer Static ratio (Note 8)

hFE

100

−

300

−

IC = -1mA, VCE = -10V

IC = -50mA, VCE = -10V

IC = -100mA, VCE = -10V

Transitional Frequency (Note 8)

−

MHz

VCE = -20V, IC = -10mA

f = 20MHz

Output Capacitance (Note 8)

Cobo

−

VCB = -20V. f = 1MHz

Switching times

ton

−

IC=-50mA, VC=-100V

IB1=5mA, IB2=-10mA

toff

1600

Notes:

8. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%

FZT558 Datasheet(PDF) 3 Page - Diodes Incorporated

FZT558 Datasheet(HTML) 3 Page - Diodes Incorporated

Html Pages

1 2 3 4 5 6

Datasheet Download

Link URL