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DCP69 Datasheet(PDF) 2 Page - Diodes Incorporated

Part # DCP69
Description  20V PNP SURFACE MOUNT TRANSISTOR
PDF  5 Pages
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DCP69 Datasheet(HTML) 2 Page - Diodes Incorporated

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DCP69/-16/-25
Document number: DS30798 Rev. 7 - 2
2 of 5
www.diodes.com
April 2012
© Diodes Incorporated
DCP69/-16/-25
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Symbol
Value
Units
Collector-Base Voltage
VCBO
-25
V
Collector-Emitter Voltage
VCEO
-20
V
Emitter-Base Voltage
VEBO
-5.0
V
Collector Current
IC
-1.0
A
Peak Pulse Current
ICM
-2.0
A
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
Power Dissipation (Note 4)
PD
1
W
Thermal Resistance, Junction to Ambient Air (Note 4)
RθJA
125
°C/W
Power Dissipation (Note 5)
PD
2
W
Thermal Resistance, Junction to Ambient Air (Note 5)
RθJA
62.5
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
BVCBO
-25
V
IC = -100μA, IE = 0
Collector-Emitter Breakdown Voltage (Note 6)
BVCEO
-20
V
IC = -10mA, IB = 0
Emitter-Base Breakdown Voltage
BVEBO
-5.0
V
IE = -100μA, IC = 0
Collector-Base Cutoff Current
ICBO
-100
-10
nA
μA
VCB = -25V, IE = 0
VCB = -25V, IE = 0, TA = 150°C
Emitter-Base Cutoff Current
IEBO
-100
nA
VEB = -5.0V, IC = 0
ON CHARACTERISTICS (Note 6)
DC Current Gain
DCP69, DCP69-16, DCP69-25
hFE
50
60
VCE = -10V, IC = -5.0mA
VCE = -1.0V, IC = -1.0A
DCP69
85
375
VCE = -1.0V, IC = -500mA
DCP69-16
100
250
VCE = -1.0V, IC = -500mA
DCP69-25
160
375
VCE = -1.0V, IC = -500mA
Collector-Emitter Saturation Voltage
VCE(sat)
-0.5
V
IC = -1.0A, IB = -100mA
Base-Emitter Turn-On Voltage
VBE (on)
-0.7
-1.0
V
VCE = -10V, IC = -5.0mA
VCE = -1.0V, IC = -1.0A
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
fT
40
200
MHz
VCE = -5.0V, IC = -50mA, f = 100MHz
Output Capacitance
Cobo
17
pF
VCB = -10V, f = 1 MHz
Notes:
4. Device mounted on FR-4 PCB; pad layout as shown on in Diodes Inc. suggested pad layout document, which can be found on our website at
http://www.diodes.com
5. Device mounted on FR-4 PCB with 1in.
2 copper pad layout
6. Measured under pulsed conditions. Pulse width = 300
μS. Duty cycle ≤ 2%.



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