| Electronic Components Datasheet Search |
|
DCP69 Datasheet(PDF) 2 Page - Diodes Incorporated |
|
|
|||||||||||||||||||||||||||||
DCP69 Datasheet(HTML) 2 Page - Diodes Incorporated |
|
2 / 5 page ![]() DCP69/-16/-25 Document number: DS30798 Rev. 7 - 2 2 of 5 www.diodes.com April 2012 © Diodes Incorporated DCP69/-16/-25 Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol Value Units Collector-Base Voltage VCBO -25 V Collector-Emitter Voltage VCEO -20 V Emitter-Base Voltage VEBO -5.0 V Collector Current IC -1.0 A Peak Pulse Current ICM -2.0 A Thermal Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Power Dissipation (Note 4) PD 1 W Thermal Resistance, Junction to Ambient Air (Note 4) RθJA 125 °C/W Power Dissipation (Note 5) PD 2 W Thermal Resistance, Junction to Ambient Air (Note 5) RθJA 62.5 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS Collector-Base Breakdown Voltage BVCBO -25 — — V IC = -100μA, IE = 0 Collector-Emitter Breakdown Voltage (Note 6) BVCEO -20 — — V IC = -10mA, IB = 0 Emitter-Base Breakdown Voltage BVEBO -5.0 — — V IE = -100μA, IC = 0 Collector-Base Cutoff Current ICBO — — -100 -10 nA μA VCB = -25V, IE = 0 VCB = -25V, IE = 0, TA = 150°C Emitter-Base Cutoff Current IEBO — — -100 nA VEB = -5.0V, IC = 0 ON CHARACTERISTICS (Note 6) DC Current Gain DCP69, DCP69-16, DCP69-25 hFE 50 60 — — — — — VCE = -10V, IC = -5.0mA VCE = -1.0V, IC = -1.0A DCP69 85 — 375 VCE = -1.0V, IC = -500mA DCP69-16 100 — 250 VCE = -1.0V, IC = -500mA DCP69-25 160 — 375 VCE = -1.0V, IC = -500mA Collector-Emitter Saturation Voltage VCE(sat) — — -0.5 V IC = -1.0A, IB = -100mA Base-Emitter Turn-On Voltage VBE (on) — — -0.7 -1.0 V VCE = -10V, IC = -5.0mA VCE = -1.0V, IC = -1.0A SMALL SIGNAL CHARACTERISTICS Current Gain-Bandwidth Product fT 40 200 — MHz VCE = -5.0V, IC = -50mA, f = 100MHz Output Capacitance Cobo — 17 — pF VCB = -10V, f = 1 MHz Notes: 4. Device mounted on FR-4 PCB; pad layout as shown on in Diodes Inc. suggested pad layout document, which can be found on our website at http://www.diodes.com 5. Device mounted on FR-4 PCB with 1in. 2 copper pad layout 6. Measured under pulsed conditions. Pulse width = 300 μS. Duty cycle ≤ 2%. |
|
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |