NPN SILICON PLANAR EPITAXIAL TRANSISTORS

BSX20

TO-18

APPLICATIONS

High Speed Saturated Switching Applications

ABSOLUTE MAXIMUM RATINGS

DESCRIPTION

SYMBOL

VALUE

UNIT

Collector -Base Voltage

VCBO

40

V

Collector -Emitter Voltage

VCES

40

V

Collector -Emitter Voltage

VCEO

15

V

Emitter -Base Voltage

VEBO

4.5

V

Collector Peak Current (t=10us)

ICM

0.5

A

Power Dissipation@ Ta=25 degC

Ptot

0.36

W

@Tc=25 deg C

1.20

W

Operating And Storage Junction

Tj, Tstg

-65 to +200

deg C

Temperature Range

THERMAL RESISTANCE

Junction to Case

Rth(j-c)

146

deg C/W

Junction to Ambient

Rth(j-a)

486

deg C/W

ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)

DESCRIPTION

SYMBOL

TEST CONDITION

MIN

MAX

UNIT

Collector-Cut off Current

ICBO

VCB=20V, IE=0

-

400

nA

VCB=20V, IE=0, Ta=150 deg C

-

30

uA

ICES

VCE=15V, VBE=0, Ta=55 deg C

-

400

nA

VCE=40V, VBE=0

-

1.0

uA

ICEX

VCE=15V, VBE=-3V , Ta=55 deg C

-

600

nA

Emitter-Cut off Current

IEBO

VEB=4.5V, IC=0

-

10

uA

Base-Cut off Current

IBEX

VCE=15V, VBE=-3V , Ta=55 deg C

-

600

nA

Collector -Emitter (sus) Voltage

VCER (sus)* IC=10mA, RBE=10 ohms

20

-

Collector -Emitter Voltage

VCEO*

IC=10mA, IB=0

15

-

V

Collector Emitter Saturation Voltage

VCE(Sat)*

IC=10mA,IB=1mA

-

0.25

V

IC=100mA,IB=10mA

-

0.60

V

IC=10mA,IB=0.3mA

-

0.30

V

Base Emitter on Voltage

VBE(on)

IC=30uA,VCE=20V, Ta=100deg C

0.35

-

V

Base Emitter Saturation Voltage

VBE(Sat) *

IC=10mA,IB=1mA

0.70

0.85

V

IC=100mA,IB=10mA

-

1.50

V

DC Current

hFE*

IC=10mA, VCE=1V

40

120

IC=100mA, VCE=2V

20

-

IC=10mA, VCE=1V, Ta= -55 deg C

20

-

Continental Device India Limited

Data Sheet

Page 1 of 3

Continental Device India Limited

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