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BSR18A Datasheet(PDF) 2 Page - Continental Device India Limited

Part # BSR18A
Description  SILICON LOW?밣OWER SWITCHING TRANSISTORS
PDF  4 Pages
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Manufacturer  CDIL [Continental Device India Limited]
Direct Link  http://www.cdilsemi.com
Logo CDIL - Continental Device India Limited

BSR18A Datasheet(HTML) 2 Page - Continental Device India Limited

  BSR18A Datasheet HTML 1Page - Continental Device India Limited BSR18A Datasheet HTML 2Page - Continental Device India Limited BSR18A Datasheet HTML 3Page - Continental Device India Limited BSR18A Datasheet HTML 4Page - Continental Device India Limited  
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Continental Device India Limited
Data Sheet
Page 2 of 4
RATINGS (at TA = 25°C unless otherwise specified)
Limiting values
Collector–base voltage (open emitter)
–VCB0
max.
40 V
Collector–emitter voltage (open base)
–VCE0
max,
40 V
Emitter–base voltage (open collector)
–VEB0
max.
5 V
Collector current (d.c.)
–IC
max,
200 mA
Total power dissipation up to Tamb = 25 °C
Ptot
max.
250 mW
Storage temperature
Tstg
–55 to +150 °C
Junction temperature
Tj
max.
150 °C
THERMAL RESISTANCE
From junction to ambient
Rth j–a
500 K/W
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified
Collector cut–off current
IE = 0; –VCB = 30 V
–ICB0
<50 nA
Emitter cut–off current
IC = 0; –VEB = 3 V
–IEB0
<50 nA
Saturation voltages
–IC = 10 mA; –IB = 1 mA
–VCEsat <
250 mV
–VBEsat
650 to 850 mV
–IC = 50 mA; –lB = 5 mA
–VCEsat <
400 mV
–VBEsat
<
950 mV
Collector capacitance at f = 100 kHz
IE = Ie = 0; –VCB = 5 V
Cc
<
4,5 pF
Emitter capacitance at f = 100 kHz
IC = Ic = 0; –VEB = 0,5 V
Ce
<
10 pF
D.C. current gain*
–IC = 0,1 mA; –VCE = 1V
hFE
>60
–IC = 1,0 mA; –VCE = 1V
hFE
>80
–IC = 10 mA; –VCE = 1V
hFE
100 to 300
–IC = 50 mA; –VCE = 1V
hFE
>60
–IC = 100 mA; –VCE = 1V
hFE
>30
Transition frequency at f = 100 MHz
–IC = 10 mA; –VCE = 20V
fT
>
250 MHz
Small signal current gain
IC = 1 mA; VCE = 10 V; f = 1 kHz
hfe
>
100
<
400
BSR18A



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