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BFX37 Datasheet(PDF) 1 Page - Continental Device India Limited |
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BFX37 Datasheet(HTML) 1 Page - Continental Device India Limited |
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1 / 4 page  PNP SILICON PLANAR TRANSISTOR BFX37 TO-18 Metal Can Package Low Lever, Low Noise Amplifier ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL Collector Emitter Voltage VCES Collector Emitter Voltage VCEO Emitter Base Voltage VEBO Collector Current Continuous IC Power Dissipation at Ta=25ºC PD Power Dissipation at Tc=25ºC PD Operating and Storage Junction Temperature Range Tj, Tstg THERMAL CHARACTERISTICS Junction to Case Rth (j-c) Junction to Ambient in free air Rth (j-a) ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise ) DESCRIPTION SYMBOL TEST CONDITION MIN TYP MAX UNIT Collector Cut Off Current ICES VCE=70V, VBE=0 10 nA VCE=70V, VBE=0, Ta=150ºC 10 µA Emitter Cut Off Current IEBO VEB=4V, IC=0 10 nA Collector Emitter Voltage VCES IC=10µA, VBE =0 90 V Collector Emitter Voltage VCEO IC=1mA, IB=0 80 V Emitter Base Voltage VEBO IE=10µA, IC=0 6.0 V Collector Emitter Saturation Voltage *VCE (sat) IC=10mA, IB=0.5mA 0.25 V IC=50mA, IB=5mA 0.40 V Base Emitter On Voltage VBE (on) IC=1mA,VCE=5V 0.65 V Base Emitter Saturation Voltage *VBE (sat) IC=10mA, IB=0.5mA 0.9 V IC=50mA, IB=5mA 0.95 V DC Current Gain *hFE IC=1µA,VCE=5V 130 IC=10µA,VCE=5V 70 230 IC=100µA,VCE=5V 125 IC=1mA, VCE=5V 125 280 IC=10mA, VCE=5V 125 *Pulsed: Pulse duration = 300 µµs, duty cycle = 1% BFX37Rev230506E 100 360 1.2 - 55 to +200 VALUE 90 80 6.0 mA mW W ºC UNIT V V V ºC/W 146 486 ºC/W Continental Device India Limited Data Sheet Page 1 of 4 Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company |
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Similar Description - BFX37 |
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