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BF820 Datasheet(PDF) 2 Page - Continental Device India Limited

Part # BF820
Description  SILICON EPITAXIAL TRANSISTORS
PDF  3 Pages
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Manufacturer  CDIL [Continental Device India Limited]
Direct Link  http://www.cdilsemi.com
Logo CDIL - Continental Device India Limited

BF820 Datasheet(HTML) 2 Page - Continental Device India Limited

  BF820 Datasheet HTML 1Page - Continental Device India Limited BF820 Datasheet HTML 2Page - Continental Device India Limited BF820 Datasheet HTML 3Page - Continental Device India Limited  
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Continental Device India Limited
Data Sheet
Page 2 of 3
RATINGS (at TA = 25°C unless otherwise specified)
Limiting values
BF820
BF822
Collector–base voltage (open emitter)
VCB0
max. 300
250 V
Collector–emitter voltage (open base)
VCE0
max.
–
250 V
Collector–emitter voltage (RBE = 2,7 kW )VCER max. 300
— V
Emitter–base voltage (open collector)
VEB0
max.
5
V
Collector current (d.c.)
IC
max.
50
mA
Collector current (peak value)
ICM
max.
100
mA
Total power dissipation
up to Tamb = 25 °C
Ptot
max.
250
mW
Storage temperature
Tstg
–55 to +150
° C
Junction temperature
Tj
max.
150
° C
THERMAL RESISTANCE
From junction to ambient
Rth j–a
500
K/W
CHARACTERISTICS
BF820
BF822
Tj = 25 °C unless otherwise specified
Collector cut–off current
IE = 0; VCB = 200 V
ICB0
<10
10 nA
Collector–emitter voltage
RBE = 2,7 kW ; VCE = 250 V
ICER
<50
50 nA
RBE = 2,7kW ; VCE = 200V; Tj = 150°C
ICER
<10
10 mA
Saturation voltage
IC = 30 mA; lB = 5 mA
VCEsat <
0,6
V
D.C. current gain
IC = 25 mA; VCE = 20 V
hFE
>50
Transition frequency at f = 35 MHz
lC = 10 mA; VCE = 10 V
fT
>60
MHz
Feedback capacitance at f = 1 MHz
IC = 0; VCE = 30 V
Cre
<
1,6
pF
BF820
BF822



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