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BF820 Datasheet(PDF) 1 Page - Continental Device India Limited |
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BF820 Datasheet(HTML) 1 Page - Continental Device India Limited |
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1 / 3 page ![]() Continental Device India Limited Data Sheet Page 1 of 3 SILICON EPITAXIAL TRANSISTORS N–P–N transistors Marking BF820 = 1V BF822 = 1X ABSOLUTE MAXIMUM RATINGS BF820 BF822 Collector–base voltage (open emitter) VCB0 max. 300 250 V Collector–emitter voltage (open base) VCE0 max. – 250 V Collector–emitter voltage (RBE = 2,7 kW )VCER max. 300 — V Collector current (peak value) ICM max. 100 mA Total power dissipation up to Tamb = 25 °C Ptot max. 250 mW Junction temperature Tj max. 150 ° C D.C. current gain IC = 25 mA; VCE = 20 V hFE >50 Feedback capacitance at f = 1 MHz IC = 0; VCE = 30 V Cre < 1,6 pF Transition frequency at f = 35 MHz IC = 10mA; VCE = 10 V fT >60 MHz BF820 BF822 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 2 1 SOT-23 Formed SMD Package Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company |
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