31

AT25DF011

DS-25DF011–032A–4/2014

Notes: 1. Not 100% tested (value guaranteed by design and characterization).

2. Only applicable as a constraint for the Write Status Register command when BPL = 1.



Note:

1. Maximum values indicate worst-case performance after 100,000 erase/program cycles.

2. Not 100% tested (value guaranteed by design and characterization).

3. Program and Erase operations characterized at -10°C to +85°C. Program and Erase operations at -40°C to -10°C

require a minimum of 1.7V.

t

Chip Select High to Ultra Deep Power-Down

3

3

µs

Software Reset Time

60

60

µs

t

CSLU

Minimum Chip Select Low to Exit Ultra Deep

Power-Down

20

20

ns

Exit Ultra Deep Power-Down Time

100

100

µs

t

RDPD

(1)

Chip Select High to Standby Mode

8

8

µs

13.6

Program and Erase Characteristics

Symbol

Parameter

1.65V-3.6V

2.3V-3.6V

Min

Typ

Max

Min

Typ

Max

Units

tPP

(1)

Page Program Time (256 Bytes)

1.5

5.0

1.5

5.0

ms

t

BP

Byte Program Time

12

8

µs

Page Erase Time

6

25

6

25

ms

(1)

Block Erase Time

4 Kbytes

50

150

50

120

ms

32 Kbytes

400

500

350

400

t

CHPE

(1)(2)

Chip Erase Time

1600

2000

1400

1600

ms

(1)

OTP Security Register Program Time

400

950

400

950

µs

t

WRSR

(2)

Write Status Register Time

20

40

20

40

ms

13.7

Power-up Conditions

Symbol

Parameter

Min

Max

Units

70

µs

t

PUW

Power-up Device Delay Before Program or Erase Allowed

5

ms

V

POR

Power-on Reset Voltage

1.45

1.6

V

Symbol

Parameter

1.65V to 3.6V

2.3V to 3.6V

Units

Min

Typ

Max

Min

Typ

Max