NPN SILICON PLANAR TRANSISTORS

BCY56

BCY57

TO-18

Metal Can Package

For General Purpose, Very High Gain Low Level and Low Noise Applications

ABSOLUTE MAXIMUM RATINGS

DESCRIPTION

SYMBOL

BCY56

UNIT

Collector Emitter Voltage

45

V

Collector Base Voltage

45

V

Emitter Base Voltage

V

Collector Current Continuous

mA

Collector Current Peak

mA

mW

Derate Above 25ºC

mW/ ºC

mW

Derate Above 25ºC

mW/ ºC

Operating and Storage Junction

Temperature Range

ºC

THERMAL CHARACTERISTICS

Junction to Ambient in free air

ºC/W

Junction to Case

ºC/W

DESCRIPTION

SYMBOL

TEST CONDITION

BCY56

BCY57

UNIT

Collector Emitter Voltage

>45

>20

V

Collector Base Voltage

>45

>25

V

Emitter Base Voltage

V

Collector Cut off Current

nA

Emitter Cut off Current

nA

Base Emitter on Voltage

V

Collector Emitter Saturation Voltage

V

V

DC Current Gain

BCY56

BCY57

BCY56

BCY57

*Pulse Test: Pulse width <300

µµs, Duty cycle< 2%

750

>40

>100

100 - 450

<100

>5

<100

0.6 - 0.7

Typ 0.08

Typ 0.20

100

100

300

2

25

BCY57

20

5

200 - 800

5

- 65 to +175

500

200

Continental Device India Limited

Data Sheet

Page 1 of 4

Continental Device India Limited

An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company