STD25NF10LA datasheet(4/15 Pages) STMICROELECTRONICS

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Electrical characteristics

STD25NF10LA

4/15

Doc ID 022319 Rev 1

Electrical characteristics

(TCASE=25°C unless otherwise specified)

Table 4.

On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

breakdown voltage

ID = 250 µA, VGS =0

100

IDSS

Zero gate voltage

drain current

VDS= 100 V

VDS= 100 V, TC = 125 °C

VGS =0

µA

IGSS

Gate-body leakage

current

VGS = ± 16 V, VDS = 0

±100

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250 µA

2.5

RDS(on)

Static drain-source on

resistance

VGS = 10 V, ID = 12.5 A

VGS = 4.5 V, ID = 12.5 A

0.030

0.035

0.040

Table 5.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 25 V, f = 1 MHz,

VGS = 0

1710

250

110

td(on)

td(off)

Turn-on delay time

Rise time

Turn-off delay time

Fall time

VDD = 50 V, ID = 12.5 A

RG =4.7 Ω VGS = 5 V

(see Figure 13)

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD = 80 V, ID = 25 A,

VGS = 5 V, RG =4.7 Ω

(see Figure 14)

8.5

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