E-pHEMT MMIC

AE368

Korean Facilities : 82-31-250-5078 / rfsales@rfhic.com

All specifications may change without notice

US Facility : 919-677-8780 / sales@rfhicusa.com

2 / 14

Version 1.3

EVB BOM

Description

Reference Designator

Manufacturer

Manufacturer's P/N

CAP, 0.5pF, 1608

C8

Murata

GRM1885C1HR50CZ01D

CAP, 1pF, 1608

L2

Murata

GRM1885C1H1R0CZ01D

CAP, 1.5pF, 1608

C4, C5

Murata

GRM1885C1H1R5CZ01D

CAP, 4pF, 1608

L4

Murata

GRM1885C1H4R0CZ01D

CAP, 100nF, 1608

C9

Murata

GRM188R71C104KA01D

CAP, 4.7uF, 3216-18

C12

AVX

TAJA475M016RNJ

IND, 22nH, 1608

C2

Taiyo Yuden

HK160822NJ

IND,10nH,±5%,2012,W/W

L3

WURTH ELEKTRONIK

74476010C

RES, 0Ohm, 1608

C1, R2, C7

ROHM

MCR03 EZPJ000

DNP

L1,R1,C3,C6,C10,C11

-

-

Typical Performance

PARAMETER

UNIT

TYPICAL

Remark

Operational Frequency Range

MHz

1930 ~ 1990

-

Small Signal Gain(S21)

dB

14.2

@ 1960MHz

Input Return Loss(S11)

dB

-20

-

Output Return Loss(S22)

dB

-14

-

Output IP3(OIP3)

dBm

46

@ 1960MHz

dBm / %

30.5 / 52

Noise Figure(NF)

dB

2.9

-

ACLR

WCDMA

2

dBm

21.2

@ -50dBc ACLR

LTE

3

21.5

Note

Test condition : Supply Voltage/DC Current = 5V/300mA, T = 25℃

1. OIP3 measured with 2 tones at an output power of +15dBm/tone separated by 1MHz

2. WCDMA 3G 1FA Test Model1 64DPCH, PAR = 10dB@0.01%

3. LTE FDD 10MHz ETM3.1 PAR=7.5dB@0.01%

C12

L1

C1

C2

C3

R1

L2

C4

C11

C10

R2

C9

L3

L4

C6

C7

C8

C5