ZSH330 datasheet(2/5 Pages) DIODES

2 / 5 page

TEST CONDITIONS

(Tamb=25°C for typical values, Tamb=-40 to 85°C for min/max values (Note3))

COMPARATOR

PARAMETER

SYMBOL

MIN

TYP.

MAX.

UNITS

Threshold Voltage

Low state output (Vcc increasing)

VIL

3.01

3.09

3.15

Threshold Voltage

High state output (Vcc decreasing)

VIH

3.01

3.07

3.15

Hysteresis

0.01

0.02

0.05

OUPUT

PARAMETER

SYMBOL

MIN

TYP.

MAX.

UNITS

Output source saturation:

VOH

(Vcc=2.7V, Isource=8.0mA)

VCC-1.3

(Vcc=2.7V, Isource=2.0mA)

VCC-1.2

(Vcc=1.0V, Isource=2

µA)

VCC-0.4

Onstate output source current

(Vcc=2.7V, Output=0V)

Isource

Offstate output leakage current

(Vcc=3.3V, Output=0V)

Ioh

0.02

0.5

µA

Clamp diode forward voltage (If=10mA) Vf

0.6

1.2

1.5

Propagation delay

(Vin 3.3V to 2.7V, Rl=10k, Tamb=25°C)

1.4

µs

TOTAL DEVICE

PARAMETER

SYMBOL

MIN

TYP.

MAX.

UNITS

Operating input voltage range

Vcc

1.0 to 6.5

Quiescent input current (Vcc=3.3V)

130

180

µA

Note:

1. Maximum package power dissipation must be observed.

2. Maximum power dissipation for the SOT223 package is calculated assuming that the device

is mounted on a PCB measuring 2 inches square.

3. Low duty cycle pulse techniques are used during test to maintain junction temperatures as

close to ambient as possible.

ZSH330

ABSOLUTE MAXIMUM RATING

Input Supply Voltage

-1 to 10V

Offstate Output Voltage

10V

Onstate Output

Source Current(Note 1)

Internally limited

Clamp Diode

Forward Current(Note 1)100mA

Operating Junction

Temperature

150°C

Operating Temperature

-40 to 85°C

Storage Temperature

-55 to 150°C

Power Dissipation

TO92

780mW

SOT223

2W(Note 2)

4-330

ZSH330 Datasheet(PDF) 2 Page - Diodes Incorporated

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